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? AUIRL7766M2tr base part number ? package type ? standard pack form quantity AUIRL7766M2 directfet medium can tape and reel 4800 AUIRL7766M2tr orderable part number ? automotive grade v (br)dss 100v r ds(on) typ. 8.0m ? i d (silicon limited) 51a max. 10m ? q g (typical) 44nc ? directfet ? isometric ? m4 automotive directfet ? power mosfet ? applicable directfet ? outline and substrate outline ? sb sc m2 m4 l4 l6 l8 description the AUIRL7766M2 combines the latest automotive hexfet? power mosfet silicon technology with t he advanced directfet? packaging technology to achieve exceptional performance in a package that has the footprint of an so-8 or 5x6mm pqfn and only 0.7mm profi le. the directfet? package is compatible with existing layout geometries used in power applications, pcb assembly equipment and vapor p hase, infra-red or convection soldering tec hniques, when application note an-1035 is followed regarding the manufacturing methods and processes. t he directfet? package allows dual sided cooling to maximize t hermal transfer in automotive power systems. this hexfet? power mosfet is designed for applications where efficiency and power dens ity are of value. the advanced directfet? packaging platform coupled with the latest silicon technology allows the AUIRL7766M2 to offer substantial system level savings and perfor mance improvement specifically in high frequency dc-dc and other heavy load applicati ons on ice, hev and ev platforms. this mosfet utilizes the l atest processing techniques to achieve low on-resi stance and low qg per silicon area. additional feat ures of this mosfet are 175c operating jun ction temperature and high repetitive peak current capability. these features combine to make this mosfet a highly efficient, robust and reliable device for high current automotive applications. absolute maximum ratings stresses beyond those listed under ?absolut e maximum ratings? may cause permanent damage to the device. these are stress rati ngs only; and functional operation of the device at these or any other condition beyond those indicat ed in the specifications is not implied. exposure to absolute- maximum-rated conditions for extended periods may affect device reliability. the ther mal resistance and power dissipation ratin gs are measured under board mounted and still air conditions. ambient temperat ure (ta) is 25c, unless otherwise specified. parameter max. units v ds drain-to-source voltage 100 v v gs gate-to-source voltage 16 i d @ t c = 25c continuous drain current, v gs @ 10v (silicon limited) ? 51 a i d @ t c = 100c continuous drain current, v gs @ 10v (silicon limited) ? 36 i d @ t a = 25c continuous drain current, v gs @ 10v (silicon limited) ? 10 i dm pulsed drain current ? 204 p d @t c = 25c power dissipation ? 62.5 w p d @t a = 25c power dissipation ? 2.5 e as single pulse avalanche energy (thermally limited) ? 61 mj e as (tested) single pulse avalanche energy ? 237 i ar avalanche current ? see fig. 16, 17, 18a, 18b a e ar repetitive avalanche energy ? mj t p peak soldering temperature 270 c ? t j operating junction and -55 to + 175 t stg storage temperature range 1 2015-12-11 hexfet? is a registered trademark of infineon. * qualification standards can be found at www.infineon.com ? advanced process technology ? optimized for automotive dc-dc and other heavy load applications ? logic level gate drive ? exceptionally small footprint and low profile ? high power density ? low parasitic parameters ? dual sided cooling ? 175c operating temperature ? repetitive avalanche capability for robustness and reliability ? lead free, rohs and halogen free ?? automotive qualified * dd g s s s s
? AUIRL7766M2tr 2 2015-12-11 thermal resistance symbol parameter typ. max. units r ? ja junction-to-ambient ? ??? 60 r ? ja junction-to-ambient ? 12.5 ??? r ? ja junction-to-ambient ? 20 ??? r ? j-can junction-to-can ?? ??? 2.4 r ? j-pcb junction-to-pcb mounted 1.0 ??? linear derating factor ? 0.42 w/c c/w ? static electrical characteristics @ t j = 25c (unless otherwise specified) ? symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 100 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.067 ??? v/c reference to 25c, i d = 5.0ma r ds(on) static drain-to-source on-resistance ??? 8.0 10 v gs = 10v, i d = 31a ? ??? 8.7 10.5 v gs = 4.5v, i d = 26a ? v gs(th) gate threshold voltage 1.0 ??? 2.5 v v ds = v gs , i d = 150a ? v gs(th) / ? t j gate threshold voltage coefficient ??? -7.3 ??? mv/c gfs forward transconductance 110 ??? ??? s v ds = 25v, i d = 31a r g internal gate resistance ??? 0.88 ??? ?? i dss drain-to-source leakage current ??? ??? 5.0 a v ds = 100v, v gs = 0v ??? ??? 250 v ds = 100v, v gs = 0v, t j = 125c i gss gate-to-source forward leakage ??? ??? 100 na v gs = 16v gate-to-source reverse leakage ??? ??? -100 v gs = -16v dynamic electrical characteristics @ t j = 25c (unless otherwise specified) ? symbol parameter min. typ. max. units conditions q g total gate charge ??? 44 66 nc ? v ds = 50v q gs1 gate-to-source charge ??? 9.6 ??? v gs = 4.5v q gs2 gate-to-source charge ??? 4.5 ??? i d = 31a q gd gate-to-drain ("miller" ) charge ??? 19 ??? see fig. 11 q godr gate charge overdrive ??? 10.9 ??? q sw switch charge (q gs2 + q gd ) ??? 23.5 ??? q oss output charge ??? 35 ??? nc v ds = 16v, v gs = 0v t d(on) turn-on delay time ??? 16 ??? ns v dd = 50v t r rise time ??? 24 ??? i d = 31a t d(off) turn-off delay time ??? 120 ??? r g = 6.8 ? t f fall time ??? 49 ??? v gs = 10v ? c iss input capacitance ??? 5305 ??? pf v gs = 0v c oss output capacitance ??? 460 ??? v ds = 25v c rss reverse transfer capacitance ??? 195 ??? ? = 1.0 mhz c oss output capacitance ??? 2735 ??? v gs = 0v, v ds = 1.0v, ? = 1.0 mhz c oss output capacitance ??? 270 ??? v gs = 0v, v ds = 80v, ? = 1.0 mhz c oss eff. effective output ca pacitance ??? 370 ??? v gs = 0v, v ds = 0v to 80v m ??? notes ? through ? are on page 3
? AUIRL7766M2tr 3 2015-12-11 diode characteristics ??? ? symbol parameter min. typ. max. units conditions i s continuous source current ??? ??? 51 a mosfet symbol (body diode) showing the i sm pulsed source current ??? ??? integral reverse (body diode) ? p-n junction diode. v sd diode forward voltage ??? ??? 1.3 v t j = 25c, i s = 31a, v gs = 0v ? t rr ? reverse recovery time ??? 45 68 ns t j = 25c, i f = 31a, v dd = 25v q rr reverse recovery charge ??? 83 125 nc dv/dt = 100a/s ? 204 ? surface mounted on 1 in. square cu board (still air). ? mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air). ? mounted to a pcb with small clip heatsink (still air) ? click on this section to link to the appropriate technical paper. ? click on this section to link to the directfet ? website. ? surface mounted on 1 in. square cu board, steady state. ? t c measured with thermocouple mounted to top (drain) of part. ? repetitive rating; pulse width limited by max. junction temperature. ? starting t j = 25c, l = 0.13mh, r g = 50 ? , i as = 31a, v gs = 20v. ? pulse width ? 400s; duty cycle ? 2%. ? used double sided cooling, mounting pad with large heatsink. ? mounted on minimum footprint full size board with metalized back and with small clip heat sink. ? r ? is measured at t j of approximately 90c. d s g
? AUIRL7766M2tr 4 2015-12-11 fig. 3 typical on-resistance vs. gate voltage fig. 1 typical output characteristics fig 5. transfer characteristics fig 6. normalized on-resistance vs. temperature fig. 2 typical output characteristics 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 7.0v 4.5v 3.5v 3.0v 2.8v bottom 2.5v ? 60s pulse width tj = 25c 2.5v 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.5v ? 60s pulse width tj = 175c vgs top 15v 10v 7.0v 4.5v 3.5v 3.0v 2.8v bottom 2.5v 2 4 6 8 10 12 14 16 v gs, gate -to -source voltage (v) 0 5 10 15 20 25 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? m ? 1 2 3 4 5 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = -40c t j = 25c t j = 175c v ds = 50v ? fig. 4 typical on-resistance vs. drain current
? AUIRL7766M2tr 5 2015-12-11 ? fig 8. typical source-drain diode forward voltage fig 9. typical forward trans conductance vs. drain current fig 10. typical capacitance vs. drain-to-source voltage -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 0.5 1.0 1.5 2.0 2.5 3.0 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 150a i d = 250a i d = 1.0ma i d = 1.0a 0.00.20.40.60.81.01.2 v sd , source-to-drain voltage (v) 1.0 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = -40c t j = 25c t j = 175c v gs = 0v 0 20 40 60 80 100 120 i d ,drain-to-source current (a) 0 50 100 150 200 250 g f s , f o r w a r d t r a n s c o n d u c t a n c e ( s ) t j = 25c t j = 175c v ds = 5.0v 380s pulse width fig. 7 typical threshold voltage vs. junction temperature 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 20 40 60 80 100 120 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 80v v ds = 50v v ds = 20v i d = 31a fig 11. typical gate charge vs. gate-to-source voltage 25 50 75 100 125 150 175 t c , case temperature (c) 0 10 20 30 40 50 60 i d , d r a i n c u r r e n t ( a ) fig 12. maximum drain current vs. case temperature
? AUIRL7766M2tr 6 2015-12-11 fig 16. typical avalanche current vs. pulse width fig 15. maximum effective transient thermal impedance, junction-to-case 0 1 10 100 1000 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by r ds (on) tc = 25c tj = 175c single pulse 100sec 1msec 10msec dc 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 50 100 150 200 250 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 6.7a 17a bottom 31a fig 14. maximum avalanche energy vs. temperature 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ? j ? j ? 1 ? 1 ? 2 ? 2 ? 3 ? 3 r 1 r 1 r 2 r 2 r 3 r 3 ci= ? i ? ri ci= ? i ? ri ? c ? c ? 4 ? 4 r 4 r 4 0.07641 0.000021 0.36635 0.000737 0.94890 0.0391496 1.00767 0.0073206 ri (c/w) ? i (sec) ? fig 13. maximum safe operating area 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.01 0.1 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) 0.05 duty cycle = single pulse 0.10 allowed avalanche current vs avalanche pulsewidth, tav, assuming ?? j = 25c and tstart = 150c. 0.01 allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 150c and tstart =25c (single pulse)
? AUIRL7766M2tr 7 2015-12-11 notes on repetitive avalanche curves , figures 16, 17: (for further info, see an-1005 at www.infineon.com) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanc he is allowed as long as t jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 18a, 18b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 16, 17). t av = average time in avalanche. d = duty cycle in avalanche = t av f z thjc (d, t av ) = transient thermal resistance, see figures 15) p d (ave) = 1/2 ( 1.3bvi av ) = ? t/ z thjc i av = 2 ? t/ [1.3bvz th ] e as (ar) = p d (ave) t av fig 17. maximum avalanche energy vs. temperature fig 18a. unclamped inductive test circuit fig 18b. unclamped inductive waveforms fig 19a. gate charge test circuit fig 19b. gate charge waveform vdd ? fig 20a. switching time test circuit fig 20b. switching time waveforms 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 10 20 30 40 50 60 70 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1.0% duty cycle i d = 31a
? AUIRL7766M2tr 8 2015-12-11 directfet ? board footprint, m4 (medium size can). please see directfet ? application note an-1035 for all details regarding the assembly of directfet ? . this includes all recommendations for stencil and substrate designs. g d s dd d ss s g = gate d = drain s = source note: for the most current drawing please refer to ir website at http://www.irf.com/package/
? AUIRL7766M2tr 9 2015-12-11 directfet ? outline dimension, m4 outline (medium size can). please see directfet ? application note an-1035 for all details regarding the assembly of directfet ? . this includes all recommendations for stencil and substrate designs. directfet ? part marking note: for the most current drawing please refer to ir website at http://www.irf.com/package/ 0.032 0.78 0.82 0.031 0.015 0.017 0.38 0.42 r0 . 0 0 3 0.02 0.08 0.001 m p 0.029 0.007 0.68 0.09 0.74 0.17 0.027 0.003 l1 0.142 3.50 3.60 0.138 code a b c d e f g h j k l 0.047 0.094 0.156 0.032 0.018 0.024 max 0.250 0.201 1.10 2.30 3.85 0.78 0.35 0.58 min 6.25 4.80 1.20 2.40 3.95 0.82 0.45 0.62 max 6.35 5.05 0.090 0.043 0.152 0.031 0.023 0.014 min 0.189 0.246 metric imperial dimensions 0.78 0.82 0.032 0.031 part number logo batch number date code line above the last character of the date code indicates "lead-free" "au" = gate and automotive marking
? AUIRL7766M2tr 10 2015-12-11 directfet ? tape & reel dimension (showing component orientation) note: for the most current drawing please refer to ir website at http://www.irf.com/package/ reel dimensions note: controlling dimensions in mm std reel quantity is 4800 parts, ordered as AUIRL7766M2tr. b c max n.c n.c 0.520 n.c n.c 0.724 0.567 0.606 imperial h min 330.0 20.2 12.8 1.5 100.0 n.c 12.4 11.9 standard option (qty 4800) code a b c d e f g h max n.c n.c 13.2 n.c n.c 18.4 14.4 15.4 min 12.992 0.795 0.504 0.059 3.937 n.c 0.488 0.469 metric g e f a d loaded tape feed direction a e note: controlling dimensions in mm code a b c d e f g h f b c imperial min 0.311 0.154 0.469 0.215 0.201 0.256 0.059 0.059 max 8.10 4.10 12.30 5.55 5.30 6.70 n.c 1.60 min 7.90 3.90 11.90 5.45 5.10 6.50 1.50 1.50 metric dimensions max 0.319 0.161 0.484 0.219 0.209 0.264 n.c 0.063 d h g
? AUIRL7766M2tr 11 2015-12-11 ? published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 2015 all rights reserved. important notice the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples , hints or any typical values stated herein and/or any information regarding the application of the product, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any thi rd party. in addition, any information given in this document is subject to customer?s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer ?s products and any use of the product of infineon technologies in customer?s applications. the data contained in this document is exclusively intended for technically trai ned staff. it is the responsibility of customer?s technical departments to evaluate the suit ability of the product for the intended application and the completeness of the product information given in this document with respect to such application. for further information on the product, technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements products may contain danger ous substances. for information on the types in question please contact your nearest infineon technologies office. except as otherwise explicitly appr oved by infineon technologies in a written document signed by authorized representatives of infineon technologies, infineon technolog ies? products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. qualification information qualification level automotive (per aec-q101) comments: this part number(s) passed automotive qualification. infineon?s industrial and consumer qualification leve l is granted by extension of the higher automotive level. moisture sensitivity level dfet2 medium can msl1 esd machine model class m4 (+/- 800v) ? aec-q101-002 human body model ? class h2 (+/- 3000v) ? aec-q101-001 charged device model n/a aec-q101-005 rohs compliant yes ? highest passing voltage. revision history date comments 12/11/2015 ?? updated datasheet with corporate template ?? corrected ordering table on page 1. ?? updated tape and reel option on page 10

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